Prof. Krishna C. Mandal

Electrical Engineering Department

University of South Carolina, Columbia, USA

E-mail: [email protected]

Qualifications

1988 Ph.D., Indian Institute of Technology, Kharagpur, India

Publications (selected)

1. Mohammad A. Mannan, Khai V. Nguyen, Rahmi O. Pak, Cihan Oner, and Krishna C. Mandal, “Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep Level Transient Spectroscopy and Isochronal Annealing Studies,” IEEE Transactions on Nuclear Science, 63, 1083-1090, 2016.
2. Khai V. Nguyen and Krishna C. Mandal, “Ru-induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy,” ECS Journal of Solid State Science and Technology, 5, P3078-P3081, 2016.
3. Rahmi Pak and Krishna C. Mandal, "Defect Levels in Nuclear Detector Grade Cd_0.9Zn_0.1Te Crystals," ECS Journal of Solid State Science and Technology, 5, P3037-P3040, 2016.
4. Sandip Das, Sandeep Chaudhuri, and Krishna C. Mandal, "Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals," ECS Journal of Solid State Science and Technology, 5, P3059-P3063, 2016.
5. Sandip Das, Raghu N. Bhattacharya, and Krishna C. Mandal, “Performance limiting factors of Cu₂ZnSn(S_xSe_1-x)4 solar cells prepared by thermal evaporation,” Solar Energy Materials and Solar Cells, 144, 347-351, 2016.
6. C. R. Schmidtlein, J. N. Turner, M. O. Thompson, K. C. Mandal, I. Haggstrom, J. Zhang, J. L. Humm, D. H. Feiglin, and A. Krol., “Performance modeling of a wearable brain PET (BET) camera,” SPIE Medical Imaging Conference, Proc. SPIE 9788, 978806-1-11, 2016.
7. Sandip Das, Krishna C. Mandal, and Raghu N. Bhattacharya, Invited Book Chapter: Chapter 2 - “Earth-Abundant Cu₂ZnSn(S,Se)₄ (CZTSSe) Solar Cells,” Book Title: Semiconductor Materials for Solar Photovoltaic Cells, Springer Series in Materials Science, Editors: M. Parans Paranthaman, Winnie Wong-Ng, and Raghu N. Bhattacharya, ISBN 978-3-319-20330-0, Vol. 218, pp. 25-74, 2015.
8. Khai V. Nguyen, Mohammad A. Mannan, and Krishna C. Mandal, “Improved n-type 4H-SiC Epitaxial Radiation Detectors by Edge Termination,” IEEE Transactions on Nuclear Science, 62, 3199-3206, 2015.
9. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and C.W. Lai, “Optical and spin polarization dynamics in GaSe nanoslabs,” Physical Review B 91, 195429-1195429-5, 2015.
10. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai," Linearly polarized remote-edge luminescence in GaSe nanoslabs," Physical Review Applied, 4, 034008-1034008-7, 2015.
11. Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai,"Exciton spin dynamics in GaSe," Journal of Applied Physics, 118, 113103-1113103-8, 2015.
12. Piyas Samanta and Krishna C. Mandal, “Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling,” Solid-State Electronics, 114, 60-68, 2015.
13. Sandeep K. Chaudhuri, Khai Nguyen, Rahmi O. Pak, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, “Large Area Cd_0.9Zn_0.1Te Pixelated Detector: Fabrication and Characterization,” IEEE Transactions on Nuclear Science, 61,793-798, 2014.
14. Krishna C. Mandal, Sandeep K. Chaudhuri, and Khai Nguyen, “Correlation of Deep Levels with Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors,” IEEE Transactions on Nuclear Science, 61, 2338 - 2344, 2014.
15. Sandip Das, Sandeep K. Chaudhuri, Raghu N. Bhattacharya, and Krishna C. Mandal, “Defect levels in Cu2ZnSn(S_1-xSe_x)4 solar cells probed by current mode deep level transient spectroscopy, Applied Physics Letters, 104, 192106-1-4, 2014.
16. Mohammad A. Mannan, Sandeep K. Chaudhuri, Khai Nguyen, and Krishna C. Mandal, “Effect of Z_1/2, EH₅ and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies,” Journal of Applied Physics, 115, 224504-1-6, 2014.
17. Sandip Das and Krishna C. Mandal, “Growth and characterization of kesterite Cu₂ZnSn(S_xSe_1-x)4 crystals for photovoltaic applications,” Materials Research Bulletin, 57, 135-139, 2014.
18. Sandip K. Das and Krishna C. Mandal, “Optical down-conversion in doped ZnSe:Tb³⁺ nanocrystals,” Nanoscale, 5, 913-915, 2013.
19. Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, “Low energy x-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer,” IEEE Transactions on Nuclear Science, 60, 2888-2893, 2013.
20. Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, “Cd_0.9Zn_0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors,” IEEE Transactions on Nuclear Science, 60, 2853-2858, 2013.