Dr. Hong Jin Kim

Globalfoundries, USA

Principal Engineer

Email: [email protected]

Qualifications

2007 Ph.D., The Ohio State University, USA, Materials Science and Engineering

2001 M.Sc., Korea Advanced Institute of Science and Technology, Korea (South), Materials Science and Engineering

1999 B.Sc., Korea University, Korea (South), Metallurgical Engineering

Publications(Selected)

1. Cho, Y., Kim, M., Hong, M., et al. (2025). Prediction of Normalized Material Removal Rate Profile Based on Deep Neural Network in Five-Zone Carrier Head CMP System. International Journal of Precision Engineering and Manufacturing-Green Technology, 12(3), 869–883.
2. Othman, A., Kim, H. J., Trivedi, R., et al. (2024). Understanding and mitigating temperature-induced agglomeration in silica-based chemical mechanical planarization (CMP) slurry storage. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 691, Article 133802.
3. Woo, J.-H., Kim, D.-G., Lee, H.-D., et al. (2022). The Measurement of Construction Error Technology for Deformable Modular System by Image Processing. International Journal of Steel Structures, 22(6), 1908–1917.
4. Kim, H. J., & Rovereto, M. (2022). Effect of brush cleaning on defect generation in post copper CMP. Microelectronic Engineering, 261, Article 111808.
5. Seo, J., Othman, A., Kim, H. J., et al. (2021). Storage Temperature Effects on the Slurry Health Parameters and SiO2 Removal Rates during Chemical Mechanical Polishing. ECS Journal of Solid State Science and Technology, 10(10), Article 104002.
6. Lee, J.-S., Lee, H.-D., Shin, K.-J., et al. (2021). Structural Performance Evaluation of Modular Connections Using Developed Blocks. International Journal of Steel Structures, 21(4), 1250–1259.
7. Egan, B., & Kim, H. J. (2019). Effect of Controlling Abrasive Size in Slurry for Tungsten Contact CMP Process. ECS Journal of Solid State Science and Technology, 8(5), P3206–P3211.
8. Kim, H. J., Egan, B., Shi, X., et al. (2018). A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing. ECS Journal of Solid State Science and Technology, 7(11), P693–P697.
9. Hwang, J.-S., & Kim, H. (2018). Mode decomposition of structures with closely distributed modes and nonclassical damping. Structural Control & Health Monitoring, 25(1), Article e2065.
10. Kim, H. J., Lawyer, A., Egan, B., et al. (2018). Study on the Mechanism of Nano-Flake Defect during Tungsten Contact Chemical Mechanical Polishing. ECS Journal of Solid State Science and Technology, 7(4), P175–P179.
11. Han, J., Shi, X., Wu, C., etal (2017). Effect of Reactive Ion Etch on the Polishing Selectivity during Silicon Nitride Chemical Mechanical Polishing for Sub-10 nm Logic Device. ECS Journal of Solid State Science and Technology, 6(4), P101–P104.
12. Kim, H.J., Govindarajulu, V., Bohra, G., etal (2016). Metal Flake Defect and Its Formation Mechanism during Replacement Metal Gate CMP Process. ECS Journal of Solid State Science and Technology, 5(10), P637–P640.
13. Kim, H.J., Bohra, G., Yang, H., etal (2015). Study of the cross contamination effect on post CMP in situ cleaning process. Microelectronic Engineering, 136, 36–41.
14. Kim, J.H., Kim, H., & Park, M. (2014). Stabilization of alkali earth metal cations in Na-4-mica. Applied Clay Science, 101, 272–276.

Profile Details

https://www.researchgate.net/profile/Hong-Jin-Kim
https://www.semiconchina.org/en/831

WOS ResearcherID: OVJ-3105-2025