Prof. Shaibal Mukherjee

Indian Institute of Technology, India

Assistant Professor

Email: [email protected]

Qualifications

2009 Ph.D., University of Oklahoma, USA

2005 M.Sc., Indian Institute of Technology, India

2003 B.Sc., University of Kalyani, India

Publications (Selected)

1. S. Mukherjee, Z. Q. Li, S. Li, S. L. Elizondo, and Z. Shi, “Accurate Calculation of PbSe-PbSrSe QW Gain for Different Crystal Orientations,” under editorial process for Physical Review B, 2009.
2. A. Gautam, S. Mukherjee, and S. Ram, “Controlled novel route to synthesis and characterization of silver nanorod,” Journal of Nanoscience and Nanotechnology, no XX, pp. 1-6, 2010.
3. A. Gautam, S. Mukherjee, and S. Ram, “Synthesis, optical and I-V characteristics of Ag-PVA nanocomposite films,” under peer review, Materials Chemistry and Physics, 2010.
4. S. Mukherjee, D. Li, G. Bi, A. Gautam, S. L. Elizondo, J. Ma, F. Zhao, and Z. Shi, “CaF2 surface passivation of lead selenide grown on BaF2,” under peer review, Journal of Microelectronic Engineering, 2010.
5. Shaibal Mukherjee, Gang Bi, Jyoti P. Kar, and Zhisheng Shi, “Two dimensional numerical analysis on mid-infrared emission from IV-VI lead salt photonic crystal microcavity,” Optica Applicata, vol. XXXIX, no. 3, pp. 499-509, 2009.
6. D. Li, S. Mukherjee, J. Ma, G. Bi, D. Ray, F. Zhao, S. L. Elizondo, G. Yu and Z. Shi, “Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 [110] Substrate,” Journal of Electronic Materials, vol. 38, pp. 1952-1955, 2009.
7. Donghui Li, J. Ma, S. Mukherjee, B. Gang, F. Zhao, S. L. Elizondo, and Z. Shi, “A new In-situ surface treatment during MBE grown PbSe on CaF2/Si(111) heterostructure,” Journal of Crystal Growth, vol. 311, pp. 3395-3398, 2009.
8. J. Ma, D. Li, G. Bi, F. Zhao, S. Elizondo, S. Mukherjee, and Z. Shi, “Nature of growth pits in lead salt epilayers grown by molecular beam epitaxy,” Journal of Electronic Materials, vol. 38, no. 2, pp. 325-329, 2009.
9. J. P. Kar, G. Bose and S. Tuli, A. Dangwal, S. Mukherjee, “Growth of AlN films and its process development for the fabrication of acoustic devices and micromachined structures,” published online, Journal of Materials Engineering and Performance, 2009.
10. J. P. Kar, S. Mukherjee, G. Bose and S. Tuli, “Impact of post-deposition annealing on the surface, bulk and interface properties of RF sputtered AlN films,” Materials Science and Technology, vol. 25, no. 8, pp. 1023-1027, 2009.
11. J. P. Kar, S. Mukherjee, G. Bose, S. Tuli, J. M. Myoung, “Opto-electrical properties of sputtered AlN films,” Optoelectronics and Advanced Materials-Rapid Communications, vol. 3, pp. 631, 2009.
12. J. P. Kar, G. Bose, S. Tuli, J. M. Myoung, S. Mukherjee, “Morphological investigation of aluminum nitride films on various substrates for MEMS applications,” Journal of Surface Engineering, vol. 25, no. 7, pp. 526-530, 2009.
13. J. P. Kar, G. Bose, S. Tuli, A. Dangwal, S. Mukherjee, “Growth of AlN films and its process development for the fabrication of acoustic devices and micromachined structures,” Materials Engineering and Performance, vol. 18, no. 8, pp. 1046-1051, 2009.
14. S. Mukherjee, D. Li, D. Ray, F. Zhao, S. L. Elizondo, S. Jain, J. Ma, and Z. Shi, “Fabrication of an Electrically Pumped Lead-Chalcogenide Mid-Infrared Laser on a [110] Oriented PbSnSe Substrate,” IEEE Photonics Technology Letters, vol. 20, no. 8, pp. 629-631, 2008.
15. F. Zhao, S. Mukherjee, J. Ma, D. Li, S. L. Elizondo, and Z. Shi, “Influence of oxygen passivation on optical properties of PbSe thin films,” Applied Physics Letters, vol. 92, no. 211110, pp. 1-3, 2008.
16. X. J. Wang, C. Fulk, F. Zhao, D. Li, S. Mukherjee, Y. Chang, R. Sporken, R. Klie, Z. Shi, C. H. Grein, and S. Sivananthan, “Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy,” Journal of Electronic Materials, vol. 37, no. 9, pp. 1200-1204, 2008.
17. S. Mukherjee, S. Jain, F. Zhao, J. P. Kar, D. Li, and Z. Shi, “Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods”, Journal of Materials Science: Materials in Electronics, vol. 19, pp. 237-240, 2008.
18. S. Mukherjee, S. Jain, F. Zhao, D. Li, J. P. Kar, and Z. Shi, “Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe – PbSrSe MQW structure”, Journal of Microelectronic Engineering, vol. 85, pp. 665-669, 2008.
19. S. Elizondo, F. Zhao, J. Kar, J. Ma, J. Smart, D. Li, S. Mukherjee, and Z. Shi, “Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT”, Journal of Electronic Materials, vol. 37, no. 9, pp. 1411-1414, 2008.
20. J. P. Kar, S. Mukherjee, G. Bose, S. Tuli, “Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films”, Journal of Materials Science: Materials in Electronics, vol. 19, pp. 261-265, 2008.