Dr. Roberto S. Murphy-Arteaga

The National Institute of Astrophysics, Optics and Electronics (INAOE), México

Email: [email protected]

Qualifications

1997  Ph.D., Physical Electronics, The National Institute of Astrophysics, Optics and Electronics (INAOE), México

1982  B.Sc., Physics, St. John’s University, USA

Publications (Selected)

1. “Miniature Patch and Slot Microstrip Arrays for IoT and ISM Band Applications”, K. Olan, R. Murphy, E. Colín, IEEE Access Vol. 8, May 2020, pp. 102846-102854.  DOI: 10.1109/ACCESS.2020.2998739.
2. “Wideband Dual-Mode Microstrip Resonators as IF Filters in a K-Band Wireless Transceiver”, L. Rodríguez, C. Gutiérrez, R. Murphy, J. Meza, J. Torres, Microwave and Optical Technology Letters, Vol. 62, No. 2, February 2020, pp. 606-614. DOI: 10.1002/mop.32066.
3. “Modeling Ground-Shielded Integrated Inductors Incorporating Frequency-Dependent Effects and Considering Multiple Resonances”, J. Valdés, R. Torres, R. Murphy, G. Álvarez, IEEE Transactions on Microwave Theory and Techniques, Vol. 67, No. 4, April 2019, pp. 1370-1378. DOI: 10.1109/TMTT.2019.2895579.
4. “Development of Thick Film, CMOS Compatible Planar Millimetre-Wave Antenna for Antennas in Package Applications”, L.K. Sandoval, R. Murphy, Microsystem Technologies, Vol. 23, No. 7, July 2017, pp. 2927-2930.
5. “Analytical Model Parameter Determination for Microwave On-Chip Inductors up to the Second Resonant Frequency”, J. Valdés, R. Torres, R. Murphy, Proceedings of the 2017 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2017), Cozumel, Mexico, June 5-7, 2017, pp. 25-28.
6. “On the Extraction Methods for MOSFET Series Resistance and Mobility Degradation using a Single Test Device”, A.Ortiz, A. Sucre, F. Zárate, R. Torres, R. Murphy, J.J. Liou, F. García, Proceedings of the 2017 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2017), Cozumel, Mexico, June 5-7, 2017, pp. 15-20.
7. “A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters”, A. Ortiz, A. Sucre, F. Zárate, R. Torres, R. Murphy, J.J. Liou, F. García, Microelectronics Reliability, Vol. 69, February 2017, pp. 1-16.
8. “Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models”, A. Ortiz, A. Sucre, R. Torres, J. Molina, R. Murphy, F. García, IEEE Transactions on Electron Devices, Vol. 63, No. 10, October 2016, pp. 3844-3850.

Personal Website:

https://www-elec.inaoep.mx/directorio/investigadores/rmurphy.php