AlGaN/GaN HEMT - Articles - Scientific Research Publishing

Deep Traps and Parasitic Effects in Al_0.25Ga_0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces (Articles)

Salah Saadaoui, Olfa Fathallah, Mohamed Mongi Ben Salem, Christophe Gaquière, Hassen Maaref

Open Access Library Journal Vol.2 No.8, August 27, 2015

DOI: 10.4236/oalib.1101562 1,430 Downloads 2,577 Views Citations
Characteristics of AlGaN/GaN HEMTs for Detection of MIG (Articles)

Hasina F. Huq, Hector Trevino II, Jorge Castillo

Journal of Modern Physics Vol.7 No.13, September 23, 2016

DOI: 10.4236/jmp.2016.713154 2,232 Downloads 5,332 Views Citations
Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements (Articles)

M. Charfeddine, Malek Gassoumi, H. Mosbahi, C. Gaquiére, M. A. Zaidi, H. Maaref

Journal of Modern Physics Vol.2 No.10, October 20, 2011

DOI: 10.4236/jmp.2011.210152 9,079 Downloads 18,730 Views Citations
2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s (Articles)

Manel Charfeddine, Hafedh Belmabrouk, Mohamed Ali Zaidi, Hassen Maaref

Journal of Modern Physics Vol.3 No.8, August 15, 2012

DOI: 10.4236/jmp.2012.38115 11,561 Downloads 19,939 Views Citations
Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors (Articles)

Salih Saygi

Open Journal of Applied Sciences Vol.4 No.3, March 11, 2014

DOI: 10.4236/ojapps.2014.43014 3,718 Downloads 5,748 Views Citations
Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT (Articles)

Palanichamy Vimala, L. Vidyashree

Journal of Applied Mathematics and Physics Vol.4 No.10, October 25, 2016

DOI: 10.4236/jamp.2016.410193 1,853 Downloads 4,266 Views Citations
This article belongs to the Special Issue on Computational Physics and Its Applications
Characteristics of GaN Thin Films Using Magnetron Sputtering System (Articles)

Hasina F. Huq, Rocio Y. Garza, Roman Garcia-Perez

Journal of Modern Physics Vol.7 No.15, November 9, 2016

DOI: 10.4236/jmp.2016.715178 2,761 Downloads 6,176 Views Citations
A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN (Articles)

Reza Karami, Masoud Sabaghi, Massoud Masoumi

World Journal of Engineering and Technology Vol.5 No.2, May 27, 2017

DOI: 10.4236/wjet.2017.52026 2,088 Downloads 4,439 Views Citations

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