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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I
(Articles)
Ali Mohsen
,
Adnan Harb
,
Nathalie Deltimple
,
Abraham Serhane
Circuits and Systems
Vol.8 No.4
, April 30, 2017
DOI:
10.4236/cs.2017.84006
4,452
Downloads
9,842
Views
Citations
28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II
(Articles)
Ali Mohsen
,
Adnan Harb
,
Nathalie Deltimple
,
Abraham Serhane
Circuits and Systems
Vol.8 No.5
, May 19, 2017
DOI:
10.4236/cs.2017.85007
3,699
Downloads
7,777
Views
Citations
Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology
(Articles)
M. Mustafa
,
Tawseef A. Bhat
,
M. R. Beigh
World Journal of Nano Science and Engineering
Vol.3 No.1
, April 1, 2013
DOI:
10.4236/wjnse.2013.31003
12,047
Downloads
18,619
Views
Citations
Design Consideration in the Development of Multi-Fin FETs for RF Applications
(Articles)
Peijie Feng
,
Prasanta Ghosh
World Journal of Nano Science and Engineering
Vol.2 No.2
, June 22, 2012
DOI:
10.4236/wjnse.2012.22011
6,571
Downloads
10,570
Views
Citations
Negative Resistance Region 10 nm Gate Length on FINFET
(Articles)
Maryam Nezafat
,
Omid Zeynali
,
Daruosh Masti
Journal of Modern Physics
Vol.5 No.12
, July 25, 2014
DOI:
10.4236/jmp.2014.512114
3,835
Downloads
5,242
Views
Citations
The Design of Ternary Field-Effect Transistors, DRAM Memory and NAND Flash Memory
(Articles)
Ben-Shan Wu
,
Xiang-Yao Wu
,
Sheng-Ji Xu
World Journal of Engineering and Technology
Vol.13 No.2
, May 27, 2025
DOI:
10.4236/wjet.2025.132020
128
Downloads
745
Views
Citations
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